2N1711, NPN Transistor, Vceo=50 V, Ic=500 mA, Pd=800 mW in a TO-39 package

2N1711 Bipolar NPN Transistor, Vceo=50 V, Ic=500 mA, Pd=800 mW in a TO-39 package. The 2N1711 is a NPN silicon Transistor for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.